Electron Ptychography for Atom-by-Atom Quantification of 1D Defect Complexes in Monolayer MoS 2

This study combines experimental imaging and DFT simulations to investigate the formation and electronic properties of line defects in monolayer MoS₂. Using high-resolution electron ptychography with 4D-STEM, it was observed the formation of one-dimensional (1D) defect complexes, including sulphur vacancy…









